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Samsung 1TB 850 EVO

Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture.

More details

Reference: SSD-SAM-1TB850EVO
$469.00
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Product Description

Benefits of Samsung V-NAND over 2D Planar NAND

  • More capacity
  • More speed
  • More endurance
  • More power efficiency
Usage Application Client PCs
Capacity 120GB, 250GB, 500GB, 1TB(1,000GB)
Dimension (W x H x D) 100 x 69.85 x 6.8 (mm)
Interface SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s)
Form factor 2.5 inch
Controller 120/250/500GB : Samsung MGX controller
1TB: Samsung MEX controller
NAND Flash Memory Samsung 32 layer 3D V-NAND
DRAM Cache Memory 256MB (120GB) or 512MB(250GB&500GB) or 1GB (1TB) LPDDR2
Performance*Sequential Read Max. 540 MB/s
Sequential Write** Max. 520 MB/s
4KB Random Read (QD1) Max. 10,000 IOPS
4KB Random Write (QD1) Max. 40,000 IOPS
4KB Random Read (QD32) Max. 98,000 IOPS(500GB/1TB)
Max. 97,000 IOPS(250GB)
Max. 94,000 IOPS(120GB)
4KB Random Write (QD32) Max. 90,000 IOPS(500GB/1TB)
Max. 88,000 IOPS(120GB/250GB)
Data Security AES 256-bit Full Disk Encryption (FDE)
TCG/Opal V2.0, Encrypted Drive(IEEE1667)
Weight Max. 66g (1TB)
Reliability MTBF: 1.5 million hours
TBW 120/250GB: 75TBW
500GB/1TB: 150 TBW
Power Consumption*** Active Read/Write (Average): Max. 3.7W(1TB) / Max. 4.4W(1TB)
Idle: Max. 50mW
Device Sleep: 2mW(120/250/500GB), 4mW(1TB)
Supporting features TRIM(Required OS support), Garbage Collection, S.M.A.R.T.
Temperature Operating: 0°C to 70°C
Non-Operating: -40°C to 85°C
Humidity 5% to 95%, non-condensing
Vibration Non-Operating: 20~2000Hz, 20G
Shock Non-Operating: 1500G, duration 0.5m sec, 3 axis
Warranty 5 Years Limited